Dependence of SOI Properties on Memory Characteristics in a Cap-Less Memory Cell

Abstract

The material property of silicon-on-insulator substrate affecting memory characteristic in Cap-less memory cell such as top silicon thickness, boron concentration, and a strain in channel was investigated to obtain higher memory margin. We demonstrated that the memory margin was maximized at specific top thickness and boron concentration, i.e., it was enhanced by 3.38 times at the top silicon thickness of 46.9 nm, compared with that at 15.5 nm, and also enhanced by 1.83 times at the boron concentration of 1.4e17 cm-3. Particularly, it was enhanced by 2.13 times with a bi-axial tensile strained channel.