Abstract
The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers of 8 atomic layers. It is shown for the first time that the density JRT of resonant current varies from 8×102 to 1.6×104 A cm−2 by the choice of the well width from 9 to 5 nm in accordance with theoretical calculations. Furthermore, one of these diodes shows excellent current-voltage characteristics at room temperature with a peak to valley ratio of 3, the highest value ever reported.
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