Abstract
ABSTRACTWe have performed a comprehensive experimental study of profiles of arsenic implanted into (100) silicon for a wide range of energies, doses, tilt angles, and rotation angles. Critical angles for channeling of arsenic ions in single-crystal silicon have been calculated and are found to agree well with experimental results. The <100> axial channels and the {110} planar channels are found to be primary sources of channeling. The optimal tilt and rotation angles which minimize channeling and maximize uniformity across a wafer are deduced.
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