Abstract
We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of absorption layer (n i ) on the photoresponse have been investigated. The Poisson and continuity equations are solved along each grid point in the 2D structure with three generation-recombination processes as Auger, Shockley-Read-Hall and optical generation-recombination. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Optimal doping concentration of absorption layers at different wavelength are extracted numerically. Theoretical modeling shows that the doping density of the absorption layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
