Abstract
In this study, we evaluate the limitations associated with variable shallow trench isolation (STI) oxide pattern densities for accurate motor current endpoint detection during chemical mechanical planarization (CMP). Results indicate that repeatable motor current endpoint detection can be achieved for STI wafers with oxide pattern density variations of up to 17.4%. Furthermore, results show that a dependence exists between the STI oxide pattern density variation and motor current endpoint success during polishing. According to the findings of this study, a suitable motor current endpoint detection system could yield successful termination points for STI polishing, as well as reduce the need for polishing reworks.
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