Abstract
D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.
Highlights
Magnetized magnetic tunnel junctions (p-MTJs) is a key device for non-volatile magnetoresistive random access memory (MRAM).[1]
Thin films of magnetic materials with perpendicular magnetic anisotropy (PMA) are commonly used as the free layer in magnetic tunnel junction (MTJ) in various spintronic applications operated by spin transfer torque (STT),[2,3] such as magnetoresistive random access memory (MRAM) and radio frequency oscillators and detectors.[4,5]
A new spintronic memory has been proposed and demonstrated, That is, voltage controlled spintronic memory (VoCSM) in which magnetization switching is achieved by the current-induced spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA).[7]
Summary
Magnetized magnetic tunnel junctions (p-MTJs) is a key device for non-volatile magnetoresistive random access memory (MRAM).[1]. Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films
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