Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection**Project supported by the National Natural Science Foundation of China (Grant Nos. 51602141, 11674147, 61604066, 11604137, and 21405076), the National Key Research and Development Project of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), and the Key Research and Development Project of Jiangxi Province, China (Grant No.

Abstract

It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing. The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection. Thus, there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing, even under the same lattice temperature. A modified and easily used ABC-model is proposed. It describes that the slope of the radiative recombination rate gradually decreases to zero, and further reaches a negative value in a small range of lattice temperature increasing. These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.