Abstract
The growth of single crystal layers is described for the composition Y 3− x R x Fe 5− y Ga y O 12 (R=Sm or La) on (111) Gd 3Ga 5O 12 substrates by liquid phase epitaxy. The reproducibility of the method is presented, the dependence of the distribution coefficients of the substituents on supercooling, and the relation between strain and composition of the layers are discussed. It is concluded that the formation or ordering of vacancies or interstitials, or substitution by impurities such as Pb 2+ of B 3+, have a negligible effect on the lattice constant.
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