Abstract
The impact ionization coefficients in GaAs/Al 0.3Ga 07As multiple quantum well structures, having well and barrier thicknesses in the range 30–500 Å, have been experimentally determined. For MQW structures having equal well and barrier thicknesses, both the electron ionization coefficient α, and the hole ionization coefficient β reduce with decreasing well dimension. There is no appreciable change in the ratio α/ β over the range of dimensions and electric fields studied.
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