Abstract
In order to optimize the shape of chemical beam epitaxy (CBE) selective area growth, growth rates on (100), (111)B, (111)A and (110) substrate orientations have been examined for GaAs and InP materials. (111)B GaAs growth rate appears to be drastically enhanced at low V III ratio, which has been applied to grow selective GaAs patterns limited by vertical sidewalls. Concerning InP, high growth rates were obtained on all orientations. This was used to perfectly fill a rectangular groove by selective embedded InP growth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
