Abstract
The effective mass of holes (m∗) in GaAs quantum wells is investigated as a function of spin polarization, temperature, and carrier density using the Hartree–Fock approximation. The results reveal m∗ initially decreases at low carrier densities before increasing with density. Additionally, as the interaction parameter increases, m∗ decreases rapidly. Especially, as the temperature rises to 200 K, m∗ asymptotically approaches a value of 0.45m0, where m0 is the electron mass. These findings provide insights into the influence of Coulomb interaction and exchange energy on the effective mass of semiconductors across a wide range of temperatures, spin polarizations, and densities.
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