Abstract
We have investigated the effects of nitrogen N concentration on the properties of hole subbands and effective mass in dilute-nitride type-II InAsN/GaSb laser diodes on InAs substrate with “W” design. Using a 5-bands k·p model, we obtained interesting numerical results for the heavy-hole (hh) and the light-hole (lh) subbands. The hole effective masses were found to be very sensitive to the nitrogen concentration and to the differences in the Luttinger parameters between the well and the barrier. In addition, the hole effective masses are found to be strongly affected by band-anticrossing (BAC) model.
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