Abstract

Pb0.88La0.08TiO3 films were processed on Si-based substrates by a diol-based sol-gel route from solutions with variable content of PbO excess. Crystallisation was performed at heating rates of 10 °C min-1 and higher than 500 °C min-1 (rapid heating). The pyroelectric coefficient was measured after poling the samples by two methods: applying a sinusoidal wave and applying a train of square pulses, with the latter showing a higher poling efficiency. The piezoelectric d33 coefficient was determined by double-beam interferometry. Strain vs. field measurements provided evidence of 90° domain orientation in these films. Those crystallised at 10 °C min-1 showed the highest functional properties (γ=1.7×10-2 μC cm-2 K-1 and d33=57 pm V-1). This is a consequence of the higher stability of the 90° domains oriented during poling, caused by the lower tensile stress arising during preparation. The voltage responsivity of these films also benefited from the lower permittivity arising from their higher porosity. These films are good candidates for applications in infrared detectors and microelectromechanical devices.

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