Abstract
Electrostatic potential distribution of Al2O3/Ge structure is investigated vs. Al2O3 thickness by X-ray photoelectron spectroscopy (XPS). The electrostatic potential distribution is found to be Al2O3 thickness dependent. This interesting phenomenon is attributed to the appearance of gap states on Al2O3 surface (GSAl2O3) and its higher charge neutrality level (CNL) compared with the CNL of gap states at Al2O3/Ge interface (GSAl2O3/Ge), leading to electron transfer from GSAl2O3 to GSAl2O3/Ge. In the case of thicker Al2O3, fewer electrons transfer from GSAl2O3 to GSAl2O3/Ge, resulting in a larger potential drop across Al2O3 and XPS results.
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