Abstract

In this paper, the structural, electronic, and optical properties of MoS2 multilayers are investigated by employing the first-principles method. Up to six-layers of MoS2 have been comparatively studied. The covalency and ionicity in the MoS2 monolayer are shown to be stronger than those in the bulk. As the layer number is increased to two or above two, band splitting is significant due to the interlayer coupling. We found that long plateaus emerged in the imaginary parts of the dielectric function {varepsilon}_2^{xx}left(omega right) and the joint density of states (JDOS) of MoS2 multilayers, due to the Van Hove singularities in a two-dimensional material. One, two and three small steps appear at the thresholds of both the long plateau of {varepsilon}_2^{xx}left(omega right) and JDOS, for monolayer, bilayer, and trilayer, respectively. As the number of layers further increased, the number of small steps increases and the width of the small steps decreases accordingly. Due to interlayer coupling, the longest plateau and shortest plateau of JDOS are from the monolayer and bulk, respectively.

Highlights

  • Molybdenum disulfide (MoS2) is one of the typical transition metal dichalcogenides and has been widely used as a catalyst [1] and hydrogen storage material [2, 3]

  • The optimized lattice constants for monolayer MoS2 are a = b = 3.19 Å, which are in accord with the bulk MoS2

  • Compared to bulk MoS2, the covalency and ionicity of monolayer MoS2 are found to be stronger, which results from larger quantum confinement in the monolayer

Read more

Summary

Introduction

Molybdenum disulfide (MoS2) is one of the typical transition metal dichalcogenides and has been widely used as a catalyst [1] and hydrogen storage material [2, 3]. Owing to the strong in-plane interactions and weak van der Waals interactions between MoS2 atomic layers [4, 5], MoS2 crystals have been known as an important solid lubricant for many years [6, 7]. The monolayer MoS2, so-called 1H-MoS2, has been exfoliated from bulk MoS2 by using micromechanical cleavage [8]. The so-called 2H-MoS2 (among 1T, 2H, 3R) is the most stable structure of bulk MoS2 [9, 10] and is a semiconductor with an indirect bandgap of 1.29 eV [4, 11, 12]. The monolayer MoS2 has drawn great attention due to its two-dimensional nature and graphene-like honeycomb structure

Methods
Results
Conclusion
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call