Abstract
Variation of crystallographic orientation in Bi2SiO5 (BSO) films grown on amorphous SiO2 substrates has been investigated as a function of annealing temperature and the amount of Bi(OH)3 precursor used for their synthesis by precipitation. We have confirmed that perfectly (100)-oriented monoclinic BSO films can be made on a SiO2 substrate by Bi(OH)3 drop coating and post-annealing. The maximum annealing temperature for the formation of perfectly (100)-oriented monoclinic BSO decreases from 1073K to 923K when the amount of Bi(OH)3 increases from 40μg/cm2 to 140μg/cm2, beyond which Bi4Si3O12 is formed besides BSO.
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