Abstract
The issue of variable bandgap values for InN films grown on c-sapphire has been addressed in this work. α-InN films have been deposited in nitrogen rich condition at different substrate temperatures on bare Al2O3 (0001) by plasma assisted molecular beam epitaxy (PA-MBE). The results of several complementary characterization techniques show that single crystalline wurtzite InN is formed, but their orientation depends on the substrate temperature. The bandgap measured on these samples (1.78 eV) is explained by Moss-Burstein shift on these degenerately n-doped samples. Our results discount effects of crystal orientation, presence of oxygen at grain boundaries and In/N stoichiometry as factors that influence the measured band-gap values.
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