Abstract
The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K with activation energy from 2.1 eV near percolation threshold and down to 0.1 eV for higher Si content. The variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.
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