Abstract
This work was motivated by the renewed interest in stabilized a-Se because of its recent applications as a photoconductor in X-ray image detectors. Stabilized amorphous selenium thick films were prepared from differently alloyed materials, to investigate the effects of As and Cl addition on the electron and hole ranges (drift mobility–lifetime product). A set of samples was prepared at different substrate temperatures during a-Se deposition from each alloy, to study the effects of substrate heating on the electronic transport. Additionally, some samples were thermally annealed and the effects on the charge transport were studied. The electron and hole mobilities were measured by the time-of-flight technique. The corresponding lifetimes were examined by the interrupted-field time-of-flight technique.
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