Abstract
We investigate in situ thermal annealing of the carbon-doped GaAs base layer in GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition in order to eliminate hydrogen incorporation. The influence of the anneal on the carrier transport properties and on the burn-in effect is studied. Results show that the anneal reduces the burn-in effect due to an increase in the emitter minority carrier diffusion length which is caused by passivation of H+ recombination centers in the GaInP emitter layer. However, the anneal also degrades the base minority carrier diffusion length leading to a reduction in the current gain.
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