Dependence of A-Si:H density of states on hydrogen content: Modeling and experiment.

Abstract

The dependence of the density of states (DOS) in the gap of hydrogenated amorphous silicon (a-Si:H) on hydrogen content is analyzed theoretically by ab-initio Molecular Dynamics (AIMD) and Density Functional Theory (DFT). Initial results indicate that we can follow the changes in the DOS with different bonding configuration. Experimental verification of this analysis was commenced using the Constant Photocurrent Method (CPM) and Isothermal Capacitance Transient Spectroscopy (ICTS) on samples grown by the Saddle Field Glow Discharge technique, which allows us to control the nature of the Hydrogen bonding in the amorphous silicon matrix.