Abstract
Acid generators are a key component of chemically amplified (CA) resists. They have been intensively investigated during the development of CA photoresists. However, the role of acid generators in acid generation processes is different between photoresists and electron beam resists. In this study, the dependence of acid yield on the kind of acid generator was investigated in CA resists for post-optical lithography. On exposure to ionizing radiation, a difference in acid yield was observed among four kinds of acid generator. The role of acid generators and their reaction mechanisms were discussed.
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