Dependable STT-MRAM With Emerging Approximation and Speculation Paradigms

Abstract

Spin-Transfer-Torque (STT) MRAM is configured with high access speed, readily hybrid integration and guaranteed endurance/retention, which becomes one of the most promising candidates for next generation memory. However, the major challenge of STT-MRAM is its high switching energy consumption, accompanied with unreliable writing operation. This work exploits two emerging design paradigms entitled approximation and speculation MRAM. A novel design scheme with timing speculation and approximate storage is proposed to improve energy efficiency in MRAM write operation by reducing write time. Simulation results show that latency and energy loss in entire write operation can be significantly reduced. The proposed technique obtains 84%/57.4% in the symmetric and unidirectional writing operations. Meanwhile, timing speculative method improves the failure/reliability in writing by re-write strategy. Related MRAM macro specification is applied to image processing, which obtains 10% (58.8%-67.2%) of the improvement of precision in image and higher image quality is obtained under the same accuracy rate.