Abstract
Using a closed torm expression for differential junction capacitance applicable when the density of states (DOS) varies exponentially with energy, we analyze p/n junction capacitance measurements that probe the DOS in boron doped hydrogenated amorphous silicon and silicon carbide alloy. In both materials the player DOS increases exponentially with energy above the Fermi level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
