Abstract
AbstractWe investigate the occurrence of impurity density of states of hydrogenic impurities placed on the axis of a cylinder quantum-well wire of GaAs/GaAlAs structure. The effects of disorder are taken into account in the calculation. It is shown that for a specific radius of the wire, the peak energy of the density of states as a function of the impurity concentration increases very fast enlarging the bandwidth. The impurity bands are considered for the observed binding energy and radius as well as for the impurity concentration of experimental interest.
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