Abstract
Hydrogenated amorphous silicon (a-Si:H) was prepared at a temperature of 460°C by thermal chemical vapour deposition (CVD) of silanes, generated by acid hydrolysis of magnesium silicide obtained from rice husk. Density of states (DOS) were determined from the capacitance-voltage relationships of Au/a-Si:H Schottky barriers (SBs) near the Fermi level of undoped specimens and found to be 1.07 × 10 17 cm −3. The high value of DOS may be due to less incorporation of hydrogen into the material.
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