Abstract
We present a method to obtain the density of states (DOS) of photoconductive insulators based on steady-state photocarrier grating (SSPG) measurements. A simple expression—relating the DOS at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the SSPG experiment. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
