Abstract
We proposed a physical model for ink-jet printed polymeric thin-film transistors (PTFTs) all over the sub- and above-threshold regions by using an effective carrier density. The nonlinearity under the low lateral electric field in the printed thiophene PTFTs was reproduced by applying the back-to-back Schottky diode model based on simple Poole–Frenkel (PF) mobility formalism. The analytical ${I}{-}\!{V}$ model supplemented with ${C}{-}\!{V}$ model in a single framework was also verified by successfully reproducing the measured characteristics of TFTs with three different thiophene polymeric channel materials. Additionally, we applied the physics-based analytical model on the inkjet-printed PTFT-based inverter and confirmed that the proposed models could predict the inverter circuit characteristics of the gain and static noise margin (SNM) based on the physical parameters.
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