Abstract
AbstractThe evaluation of the density of states of a semiconductor disordered by a high density of impurities is considered by path integral methods. An effective momentum approximation and a cumulant approximation in momentum space are both used and graphical results for the density of states are presented. The results are applied to the evaluation of the static electrical mobility. It is found that this can be described by a Boltzmann like and non‐Boltzmann like term and graphical results for the variation with Fermi energy of both these terms are given.
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