Abstract
A variational procedure in the effective-mass approximation was used in the study of both the density of donor states and the associated optical absorption spectra of GaAs-(Ga,Al)As semiconductor heterostructures. Calculations were performed for a finite, cylindrical-shaped quantum box of GaAs within the infinite-barrier approximation and considering an homogeneous distribution of impurities within the low-dimensional heterostructure. Theoretical results for the density of impurity states and donor-related optical absorption spectra were found to be in good agreement with previous studies in the limiting cases of quantum wells and quantum-well wires.
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