Abstract
In this study, the Quad gate with gate oxide stack for 3 fins which is a vertically stacked device for the classical model and added the quantum mechanical effects to classical refers to the quantum model and both models have been explored for its analog performance. The analog and RF parameters for device performance like trans-conductance (gm), output conductance (gd), intrinsic gain (Av), and cut-off frequency (ft) are evaluated using a Visual TCAD tool. The simulation result reveals that a capacitance value for classical and quantum model (in the order of 10−19) which minimizes ON state delay and making the device suitable for fast switching applications. The AC analysis of the device demonstrates quite a high cut off frequency of 0.167 THz for classical model and 6.6 THz for Quantum model and a remarkable trans-conductance (Gm) of 23 µS. Furthermore, the P-type device response of the same has been studied extensively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
