Abstract
Density Functional Theory Study of Polarization-Induced Electron Confinement by Dilute Boron Alloying in ε-Ga<sub>2</sub>O<sub>3</sub> Nanometer-Thick Film for High Electron Mobility Transistor
Full Text
Sign-in/Register to access full text options
Published version (Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have