Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays

Abstract

In this paper, single-crystal ZnS column arrays are prepared on the ZnS wafer. The ZnS column arrays are then utilized as a transition layer to achieve large-scale homoepitaxial growth of ZnS nanowire arrays. Through annealing ZnS columns coated with Au films at different temperatures, the Au particle density is controlled, and the ZnS nanowire density is controlled via a vapor−liquid−solid process ranging from 0.33 to 3.04 wires/μm2. This universal method can be easily applied to homoepitaxially grow nanowire arrays of other materials and tune the nanowire density.