Abstract
We have directly measured, under operating conditions, the distributions of carrier densities and temperatures in a gain-clamped semiconductor optical amplifier designed for operation at 1.55 μm. As expected, longitudinal spatial hole burning is much smaller than in conventional semiconductor optical amplifiers and the effects of gain clamping are clearly evidenced. The amplifier nevertheless shows a sizeable temperature increase for both the lattice and the carriers at high currents, which are attributed to contributions of Auger recombination, intervalence band absorption, and Joule and recombination heating.
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