Abstract
Si3N4-TiN composites with an Si3N4 matrix and TiN dispersion were prepared at deposition temperatures of 1050 to 1450° C and total gas pressures of 1.33 to 10.7 kPa by the chemical vapour deposition of a SiCl4-TiCl4-NH3-H2 system. The density and deposition rate were measured and the formation mechanism of the composites was considered. The density of the crystalline (α or β) Si3N4 matrix was practically equal to the theoretical values. However, the density of the amorphous Si3N4 matrix was between 2.85 and 3.03 g cm−3, depending on the deposition conditions. The highest growth rate of thickness for the composites was 0.47 mm h−1. The deposition rate of the Si3N4 matrix increased with the addition of TiCl4 vapour, the apparent activation energy being 68 to 84 kJ mol−1. The deposition rate of the TiN dispersion exhibited a minimum at a deposition temperature of 1250 or 1350° C.
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