Abstract
The densification mechanism of CeO2 doped Si3N4 ceramics during spark plasma sintering (SPS) was investigated. The sintering process was observed to undergo significant densification at the intermediate stage of sintering (1435 °C–1816 °C), and the density and grain size of CeO2 doped Si3N4 ceramic were found to be greater than those of pure Si3N4 ceramic under the same sintering conditions. To determine the densification mechanism, a creep model was utilized to determine the densification mechanism which could be interpreted based on the values of the stress exponent (n) and the apparent activation energy (Q d). The results revealed that the Q d of pure Si3N4 (381.15 kJ mol−1) is higher than that of Si3N4-CeO2 powder (265.61 kJ mol−1). Moreover, the stress exponent n of Si3N4-CeO2 powder (1.12–1.33) was higher than that of pure Si3N4 powder (1.00–1.18). This can be attributed to the fact that the addition of CeO2 resulted in the formation of a liquid phase at the grain boundary which leading to a shift in the controlling mechanism from grain boundary diffusion to grain boundary sliding.
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