Densely packed Ga2O3 nanostructured film via pH-controlled crystal growth and memristive properties

Abstract

Gallium Oxide (Ga2O3) nanostructured film is deposited via a single step aqueous method by controlling the pH value of precursor solution. The uniformity, density and crystallite size varies when the pH of precursor solution changes from pH 6 to pH 9. The as-deposited nanostructured film is present in hydroxide crystalline phase which gets converted to a mixed phase (‘α’ and ’β’) when heat treated at 600 ​°C. The densely packed Ga2O3 nanostructured film (at pH 8) shows better electrical conductivity and stable current density of 10−8 A/cm2. The memristive measurement for densely packed nanostructured film results in ROFF/RON ratio in order of 102, whereas the Vset and Vreset values are observed to be 2.7V and −3.1V respectively. This single step process is suitable for deposition of good quality, large crystallite, densely packed nanostructured Ga2O3 films that can be utilized in various electronic and optoelectronic applications.