Abstract
When highly charged ions were implanted on a graphite surface with monitoring of secondary electrons emitted at the point of incidence, dot structures on the surface, as the imprint of ion incidence, were observed by a scanning tunneling microscope (STM). The number of events of secondary electron emission and the number of imprints coincided, which indicates that a method of detecting incident events of ion implantation of almost 100% efficiency has been established by using highly charged ions.
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