Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)

Abstract

GaN-based light-emitting diodes (LEDs) grown on template of 3C-SiC/Si(111) were demonstrated. The structural properties have been investigated systematically by means of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It is found that the intermediate layer (IL) of 3C-SiC leads to not only a significant improvement in the crystalline quality of GaN, but also better interfaces between the buffer layer and the initial layers of strained-layer superlattice. The device properties were also evaluated using the measurements of current-voltage, electroluminescence, and light output power-current. Compared to conventional LEDs that do not contain 3C-SiC IL, the device with IL exhibits enhanced output power by more than 200% at an injection current of 20 mA, and the operating voltage is slightly increased from 3.7 to 3.9 V. These results indicate that using 3C-SiC as IL is one of the promising approaches to improve the performance of LEDs on silicon.