Abstract
The circular photogalvanic effect, induced by infrared radiation, has been observed in (0001)-oriented n-GaN low dimensional structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin splitting of the conduction band in k space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin splitting, caused by the built-in asymmetry at the AlGaN∕GaN interface.
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