Abstract
We fabricate hybrid quantum dot (QD) solar cells by combining type-I InAs/GaAs QDs and type-II GaSb/ aAs QDs, where the benefits of strong light absorption of type-I QDs and long carrier lifetime of type-II QDs are combined in a single device by using molecular beam epitaxy. We confirm the processes of photon absorption and emission by type-I QDs and reabsorption by type-II QDs by investigating their photoluminescence properties. The photovoltaic effects in such hybrid QD solar cells are also demonstrated. Our hybrid QD nanostructures would find potential applications in high efficiency QD-based solar cells operating under concentrated sunlight.
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