Abstract

We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development of large area mid wavelength infrared (MWIR) focal plane arrays (FPAs) as well as smaller format long wavelength infrared (LWIR) arrays. Barrier infrared photodetectors (BIRDs) and superlattice-based infrared photodetectors are expected to outperform traditional III-V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II-VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb superlattice pin photodiode and bulk InAsSb structures on GaSb substrates. The coupled quantum well superlattice device offers additional control in wavelength tuning via quantum well sizes and ternary composition. Furthermore, we have fabricated mid-wavelength 1024x1024 pixels superlattice imaging FPAs, 640x512 MWIR arrays based on the BIRD concept, and 256x256 LWIR arrays based on pin superlattice structures. These initial FPA have produced excellent infrared imagery.

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