Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This letter demonstrates a high-voltage, high-current, and low-leakage-current GaN/AlGaN power HEMT with <formula formulatype="inline"><tex Notation="TeX">$\hbox{HfO}_{2}$</tex></formula> as the gate dielectric and passivation layer. The device is measured up to 600 V, and the maximum <emphasis emphasistype="smcaps">on</emphasis>-state drain current is higher than 5.5 A. Performance of small devices with <formula formulatype="inline"><tex Notation="TeX">$\hbox{HfO}_{2}$ </tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$\hbox{Si}_{3}\hbox{N}_{4}$</tex></formula> dielectrics is compared. The electric strength of gate dielectrics is measured for both <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{2}$</tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$\hbox{Si}_{3}\hbox{N}_{4}$</tex></formula>. Devices with <formula formulatype="inline"><tex Notation="TeX">$\hbox{HfO}_{2}$</tex></formula> show better uniformity and lower leakage current than <formula formulatype="inline"><tex Notation="TeX">$\hbox{Si}_{3}\hbox{N}_{4}$</tex></formula> passivated devices. The 5.5-A <formula formulatype="inline"><tex Notation="TeX">$\hbox{HfO}_{2}$</tex></formula> devices demonstrate very low gate (41 nA/mm) and drain (430 nA/mm) leakage-current density and low on-resistance (6.2 <formula formulatype="inline"><tex Notation="TeX">$\Omega \cdot \hbox{mm}$</tex></formula> or 2.5 <formula formulatype="inline"> <tex Notation="TeX">$\hbox{m}\Omega\cdot \hbox{cm}^{2}$</tex></formula>). </para>