Abstract
We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards for high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 °C. In our high-temperature storage experiments at 85 °C, we find that the electro-optic activity converges to a constant long-term stable level after an initial decay. If we consider a burn-in time of 300 h, the π-voltage of the modulators increases on average by less than 15% if we store the devices for an additional 2400 h. The performance of the devices is demonstrated by generating high-quality 40 Gbit/s OOK signals both after the burn-in period and after extended high-temperature storage.
Highlights
Silicon photonics is a promising integration platform for photonic devices, exploiting mature CMOS processes for low-cost high-yield mass fabrication of densely integrated photonic circuits that are ideally suited for high-volume applications such as optical communications [1]
Since the associated change in the refractive index is small, the π-voltage-length product UπL is typically as large as 10 Vmm [4,5,6]. This shortcoming of the Si platform can be overcome by combining silicon photonic or plasmonic waveguides with highly efficient organic EO (OEO) materials, leading to the so-called silicon-organic hybrid (SOH) [7,8] or plasmonic-organic hybrid (POH) [9,10] approach
We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage
Summary
Silicon photonics is a promising integration platform for photonic devices, exploiting mature CMOS processes for low-cost high-yield mass fabrication of densely integrated photonic circuits that are ideally suited for high-volume applications such as optical communications [1]. Since the associated change in the refractive index is small, the π-voltage-length product UπL is typically as large as 10 Vmm [4,5,6] This shortcoming of the Si platform can be overcome by combining silicon photonic or plasmonic waveguides with highly efficient organic EO (OEO) materials, leading to the so-called silicon-organic hybrid (SOH) [7,8] or plasmonic-organic hybrid (POH) [9,10] approach. Low chirp with an α - parameter of 0.1 [13] and a high extinction ratio in excess of 30 dB [16] have been shown While these demonstrations outperform many competing device concepts in terms of efficiency, footprint, and speed, the reliability and long-term stability of SOH devices was less extensively investigated and still represents a weakness of the technology. We believe that our demonstration represents an important milestone towards industrial adoption of the SOH technology
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