Abstract
2007 International Conference on Solid State Devices and Materials,Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
