Abstract
Demonstration of High Avalanche Capability in 1200 V-Rated SiC Junction Barrier Schottky Diodes With Record Avalanche Energy Density
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https://doi.org/10.1109/tpel.2023.3329002
Copy DOIPublication Date: Mar 1, 2024 |
Demonstration of High Avalanche Capability in 1200 V-Rated SiC Junction Barrier Schottky Diodes With Record Avalanche Energy Density
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