Demonstration of giant anisotropic magnetoresistance, high spin filtering efficiency, and negative differential resistance in nanodevices based on oxygen doped black arsenic phosphorus nanoribbons

Abstract

We investigate the electrical properties of pure black arsenic phosphorus and oxygen atom doped monolayer black arsenic phosphorus using first principle calculations. The density of states results reveals that oxygen atom doped black arsenic phosphorus is a magnetic semiconductor. The current-voltage characteristic curves of oxygen atom doped monolayer black arsenic phosphorus nanoribbons based devices have been determined using the non-equilibrium Green's function associated with the density function theory. The results demonstrate that the device made of doped black arsenic phosphorus has a substantial current difference between armchair and zigzag black arsenic phosphorus nanoribbons, implying that the device made of nanoribbons has a large anisotropic magnetoresistance. The spin filtering efficiency is nearly 100% at some bias voltage levels, and the transmission spectrums of the associated bias voltage window can explain the significant negative differential resistance. Furthermore, these findings suggest that oxygen atom doped black arsenic-phosphorus nanoribbons are suitable for spintronic devices.