Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

Abstract

Co-integration of the key power stage, namely gate drivers and half-bridge in a single-die solution, is a tremendous and inevitable challenge to realizing GaN power integrated circuits (GaN power ICs). In this letter, a monolithically integrated GaN half-bridge including the drivers were successfully fabricated on 200-mm engineered substrates of Qromis substrate technology (QST®). Deep trench isolation together with the buried oxide of the GaN-on-QST® isolates the high side, low side, and the drivers. While on GaN-on-Si, the back-gating effect more and more impedes the integration of a half-bridge’s low side and high side as the voltage increases. This effect is fully eliminated using the proposed effective isolation strategy. In this letter, we will present a single-die GaN power IC exhibiting 200-V swift switching capability. Finally, based on this GaN power IC, a 48V-to-1V single-stage buck converter was successfully demonstrated.