Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications

Abstract

AlGaN/AlGaN distributed Bragg reflectors (DBRs) have been developed for potential use in deep-UV light emitting diodes (LEDs) and exceed the performance of all previously reported nitride DBRs for deep-UV wavelengths. The DBRs were grown on 4H-SiC by plasma-assisted molecular beam epitaxy. All layers had Al content exceeding 50% thus minimizing light absorption within the structure. DBRs are demonstrated with 19.5 periods to be 80% reflective at 254 and 280 nm, with clear routes for improvement.