Abstract
SiC bipolar junction transistors (BJTs) were fabricated based on the design criterion proposed in our previous study, which quantitatively proved the importance of decreasing a base spreading resistance. To reduce the base spreading resistance, Al+-implantation was performed in the parasitic base region. No negative influences due to the implantation damage on the current gain were confirmed when the implantation is performed sufficiently apart from the emitter mesa sidewall, the distance of which is longer than ${3}~\mu \text{m}$ . Since the fabricated BJTs satisfied the design criterion, clear conductivity modulation was achieved, resulting in a reduced collector-resistance, that is, 50% of the unipolar resistance. In addition, we experimentally demonstrated that the conductivity modulation in SiC BJTs could be enhanced by decreasing the base spreading resistance.
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